View MP4T64539_1282416.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Silicon Bipolar High fT Low Noise Microwave Transistors
Features
*fT to 9 GHz *Low Noise Figure *High Associated Gain *Hermetic and Surface Mount Packages Av ailable *Can be Screened to JANTX, JANTXV Equiv alent Lev els *Industry Standard
MP4T645
Case Styles
Description
The MP4T645 family of high gain-bandwidth, small signal silicon bipolar transistors is well suited for use in amplifiers to approximately 4 GHz, and in oscillators to approximately 10 GHz. These industry standard transistors freature low noise figure at high collector current, which produces v ery good associated gain and wide dynamic range. The MP4T645 series transistors are av ailable in a hermetic microstrip package (MP4T64535), in the plastic SOT-23 package (MP4T64533), in chip form (MP4T64500), and in the SOT-143 package (MP4T64539). The MP4T645 series is av ailable in other plastic and hermetic packages as well. The chip and hermetically packaged transistors can be screened to a JANTXV equiv alent lev el.
SOT-23
SOT-143
Chip Applications
The MP4T645 family of bipolar NPN transistors can be used for low noise, high associated gain. large dynamic range amplifiers up to approximately 4 GHz. These transistors can also be used as preamplifier or driv er stages in the same frequency range. The MP4T645 family of bipolar NPN transistors can also be used for oscillators or VCOs up to approximately 10 GHz. The passiv ation consists of silicon dioxide, commonly known as thermal oxide, and silicon nitride to produce v ery low 1/f noise in both amplifiers and oscillators.
Micro-X
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
1
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High fT Low Noise Microwave Transistors
Absolute Maximum Ratings MP4T645 Series
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Operating Temperature Storage Temperature Chip or Ceramic Packages Plastic Packages Total Power Dissipation at 25 C Derate Linearly to: +150 Chip C +125 Plastic Package (SOT-23) C +150 Ceramic Package (Micro-X) C 400 mW 200 mW 300 mW VCBO VCEO VEBO IC Tj 25 V 12 V 1.5 V 65 mA 200 C -65 to +200 C C -65 to +125 C C
MP4T645 Series
Electrical Specifications @ 25 C
MP4T645 Series
MP4T64500 Parameter of Test Gain Bandwidth Product Insertion Power Gain Condition VCE = 8 volts I C = 20 mA VCE = 8 volts I C = 20 mA f = 1 GHz f = 2 GHz f = 4 GHz VCE = 8 volts I C = 7 mA f = 1 GHz f = 2 GHz VCE = 8 volts I C = 7 mA f = 1 GHz f = 2 GHz VCE = 8 volts I C = 10 mA f = 2 GHz f = 4 GHz VCE = 8 volts I C = 10 mA f = 1 GHz f = 4 GHz Symbol fT |S21E|2 Units GHz dB 18 typ 11 min 7 typ NF dB 1.7 max 2.0 typ GTU (max) dB 18 typ 11 typ MAG dB 14 typ 12 typ P1dB dBm 16 typ 11 typ 16 typ 11 typ 16 typ 11 typ 13 typ 10 typ 14 typ 11.5 typ 16 typ 10 typ 17 typ 11 typ 1.7 max 2.5 typ 1.7 max 2.0 typ 16 typ 10 min 17 typ 10 min 6.5 typ Chip 10 typ MP4T64535 SOT-23 8 typ MP4T64533 Micro-X 9 typ
Noise Figure
Unilateral Gain
Maximum Available Gain
Power Out at 1 dB Compression
Note:
The electrical characteristics of the MP4T64539 (SOT-143) are very similar to those of the MP4T64533 (SOT-23).
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
2
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High fT Low Noise Microwave Transistors
MP4T645 Series
Electrical Specifications @ 25 C MP4T645 Series
Parameter Collector Cut-off Current Emitter Cut-off Current Forward Current Gain Collector-Base Junction Capacitance Condition VCB = 8 volts I E = 0 A VEB = 1 volt I C = 0 A VCE = 8 volts I C = 7 mA VCB = 10 volts I E = 0 A f = 1 MHz Symbol I CBO I EBO hFE CCO Min 30 Typical 125 0.3 Max 100 1 250 0.6 Units nA A pF
Typical Scattering Parameters in the MIcro-X Package MP4T64535, VCE = 8 Volts, IC = 7 mA
Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.583 0.569 0.573 0.587 0.598 0.616 0.645 0.675 0.705 0.749 0.791 0.832 Angle -114 -153 -173 170 159 150 142 132 124 115 106 96 Mag. 9.315 5.399 3.807 2.980 2.479 2.132 1.935 1.782 1.631 1.538 1.445 1.395 S21E Angle 116.1 94.7 82.0 72.0 62.7 54.8 47.0 38.5 29.6 22.0 14.4 6.1 Mag. 0.052 0.063 0.072 0.082 0.092 0.103 0.118 0.130 0.143 0.159 0.176 0.188 S12E Angle 43.6 39.0 40.0 42.5 44.0 45.2 45.5 45.7 45.5 44.5 43.6 42.3 Mag 0.573 0.406 0.357 0.313 0.299 0.304 0.289 0.281 0.292 0.281 0.283 0.306 S22E Angle -42.6 -53.0 -57.1 -61.8 -71.7 -78.5 -86.5 -96.6 -105.5 -114.1 -125.7 -135.0
MP4T64535, VCE = 8 Volts, IC = 10 mA
Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.562 0.564 0.575 0.592 0.601 0.618 0.648 0.677 0.706 0.749 0.790 0.831 Angle -128 -161 176 166 156 148 139 130 122 113 104 95 Mag. 10.477 5.845 4.088 3.185 2.638 2.266 2.053 1.892 1.734 1.634 1.532 1.482 S21E Angle 111.9 92.1 80.5 70.9 62.0 54.5 46.9 38.6 29.8 22.3 14.8 6.4 Mag. 0.044 0.056 0.068 0.080 0.092 0.105 0.122 0.136 0.150 0.167 0.184 0.196 S12E Angle 44.5 44.0 46.5 49.0 49.7 50.1 49.4 48.7 47.9 46.1 44.4 42.6 Mag 0.515 0.358 0.313 0.276 0.268 0.272 0.259 0.253 0.264 0.257 0.259 0.278 S22E Angle -46.2 -53.8 -57.2 -62.3 -71.7 -78.3 -87.0 -96.9 -106.0 -115.1 -126.3 -136.0
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
3
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High fT Low Noise Microwave Transistors
MP4T645 Series
Typical Scattering Parameters in the MIcro-X Package (Cont' d) MP4T64535, VCE = 8 Volts, IC = 20 mA
Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.536 0.565 0.579 0.592 0.612 0.630 0.660 0.691 0.719 0.760 0.803 0.844 Angle -154 -177 170 160 151 142 134 125 117 109 101 92 Mag. 11.788 6.309 4.350 3.368 2.798 2.390 2.156 1.984 1.809 1.697 1.594 1.540 S21E Angle 104.0 87.5 77.0 68.6 60.1 52.6 45.4 37.2 28.4 21.3 13.8 6.0 Mag. 0.033 0.046 0.062 0.077 0.093 0.108 0.126 0.141 0.155 0.173 0.192 0.210 S12E Angle 49.8 55.7 57.7 59.3 58.0 56.5 54.4 52.6 50.9 48.5 46.0 44.2 Mag 0.390 0.284 0.270 0.237 0.226 0.243 0.231 0.223 0.240 0.229 0.229 0.258 S22E Angle -46.8 -53.2 -54.6 -57.5 -70.0 -77.2 -84.4 -95.8 -105.2 -112.6 -112.3 -136.2
Typical Scattering Parameters in the SOT-23 Package MP4T64533, VCE = 8 Volts, IC = 7 mA
Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 S11E Mag. 0.421 0.257 0.232 0.238 0.256 0.279 0.310 0.338 0.359 Angle -95 -149 -176 157 140 126 116 106 97 Mag. 7.378 4.384 3.082 2.408 2.005 1.734 1.498 1.367 1.284 S21E Angle 126.4 118.9 123.3 129.2 136.3 143.2 153.3 163.5 173.8 Mag. 0.062 0.100 0.140 0.183 0.224 0.274 0.308 0.350 0.402 S12E Angle 77.9 97.9 116.2 130.9 145.7 160.8 172.0 173.6 161.0 Mag 0.519 0.402 0.368 0.354 0.346 0.339 0.331 0.320 0.327 S22E Angle -36.3 -36.9 -39.6 -44.7 -51.6 -58.8 -68.5 -80.1 -90.6
MP4T64533, VCE = 8 Volts, IC = 10 mA
Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 S11E Mag. 0.299 0.216 0.215 0.230 0.247 0.267 0.299 0.328 0.352 Angle -116 -161 172 151 134 123 114 104 96 Mag. 8.385 4.558 3.185 2.487 2.064 1.783 1.548 1.410 1.320 S21E Angle 119.4 116.9 122.7 129.0 136.4 143.8 153.9 164.0 174.5 Mag. 0.057 0.099 0.142 0.188 0.230 0.281 0.315 0.357 0.408 S12E Angle 82.1 102.3 119.5 132.9 146.9 161.5 172.5 173.6 161.3 Mag 0.451 0.354 0.332 0.332 0.332 0.322 0.310 0.299 0.310 S22E Angle -33.9 -33.2 -37.7 -44.0 -50.1 -56.1 -66.4 -79.2 -90.1
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
4
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High fT Low Noise Microwave Transistors
MP4T645 Series Typical Performance Curves
MP4T645 Series
NOMINAL POWER DERATING CURVES
500 400 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 AMBIENT TEMP (C)
MP4T64533 in SOT-23 Package MP4T64535 in Micro-X Package
NOMINAL COLLECTOR-BASE CAPACITANCE vs COLLECTOR-BASE VOLTAGE (MP4T64535)
0.6 COLLECTOR-BASE CAPACITANCE (CCB) (pF) 0.55 0.5 0.45 0.4 0.35 0.3 0.25 0.2 1 10 COLLECTOR-BASE VOLTAGE (VCB) (Volts) 100
450 TOTAL POWER DISSIPATION (mW)
MP4T64500 Chip on Infinite Heat Sink
NOMINAL GAIN vs FREQUENCY at VCE = 8 VOLTS, IC = 10 mA (MP4T64535)
24 20 GAIN (dB) 16 GTU (MAX) 12 8 |S21E|2 4 0 1 2 FREQUENCY (GHz) 5 10 GAIN (dB)
NOMINAL GAIN vs COLLECTOR CURRENT at f = 1.5 GHz, VCE = 8 Volts (MP4T64535)
15 14 13 12 11 10
GTU (MAX) MAG
9 8 7 6 1 10 COLLECTOR CURRENT (mA) 100 |S21E|2
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
5
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High fT Low Noise Microwave Transistors
MP4T645 Series
Typical Performance Curves (Cont' d)
NOMINAL GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT (MP4T64535)
20
DC CURRENT GAIN (hFE)
NOMINAL DC CURRENT GAIN vs COLLECTOR CURRENT at VCE = 8 VOLTS (MP4T64535)
1000
GAIN BANDWIDTH PRODUCT (fT) (GHz)
100
2 1 10 COLLECTOR CURRENT (mA) 100
10 1 10 COLLECTOR CURRENT (mA) 100
NOMINAL NOISE FIGURE and ASSOCIATED GAIN vs FREQUENCY at VCE = 8 VOLTS, COLLECTOR CURRENT = 7 mA (MP4T64535)
100 NOISE ASSOCIATED FIGURE(dB) GAIN (dB) NOISE ASSOCIATED FIGURE(dB) GAIN (dB) 13 11 9 7 5
NOMINAL NOISE FIGURE and ASSOCIATED GAIN vs COLLECTOR CURRENT at f = 1 GHz and VCE = 8 VOLTS(MP4T64535)
Associated Gain
ASSOCIATED GAIN
10
NOISE FIGURE
50 OHM Noise Figure 3 1
Optimum Match for Noise Figure
1 0.1 1 FREQUENCY (GHz) 10
0
5
10 15 COLLECTOR CURRENT (mA)
20
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
6
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High fT Low Noise Microwave Transistors
Typical Performance Curves (Cont' d)
NOMINAL OUTPUT POWER at the 1dB COMPRESSION POINT vs COLLECTOR CURRENT at f = 1 and 4 GHz, VCE = 8 VOLTS (MP4T64535)
24 22 POWER OUT @ 1 dB COMPRESSION (dBm) 20 18 16 14 12 10 8 6 0 10 20 COLLECTOR CURRENT (mA) 30 40 P1dB at 4 GHz P1dB at 1 GHz
MP4T645 Series
Case Styles MP4T64533 MP4T64533 SOT-23
F D Collector M G B K A N
L H Base J Emitter C E
DIM. A B C D E F G H J K L DIM. M N
INCHES MIN. MAX. 0.044 0.004 0.040 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.037 typical 0.075 typical 0.103 0.024 GRADIENT 10max. 1 2. . . 30
MILLIMETERS MIN. MAX. 1.12 0.10 1.00 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 0.95 typical 1.90 typical 2.60 0.60
NOTE: 1. Applicable on all sides
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
7
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High fT Low Noise Microwave Transistors
MP4T645 Series
Case Styles (Cont' d) MP4T64535 MP4T64535 Micro-X
Emitter F 4 PLCS. E H
Collector B
Base
Emitter
DIM. A B C D E F G H
C
INCHES MIN. MAX. 0.092 0.108 0.079 0.087 0.070 0.019 0.025 0.018 0.022 0.150 0.003 0.006 45
MILLIMETERS MIN. MAX. 2.34 2.74 2.01 2.21 1.78 0.48 0.64 0.46 0.56 3.81 0.08 0.15 45
A
G
D
MP4T64500
DIM. A B C D E (Dia.) F (chip thickness) INCHES 0.013 0.013 0.004 0.0005 0.0012 0.0045 MILLIMETERS 0.325 0.325 0.110 0.013 0.030 0.114
MP4T64500 Case Style 00 (Chip)
E BASE
C
B
MP4T64539
EMITTER
D A
MP4T64539 Case Style SOT-143
Emitter G J A P Base
DIM. A B C D E F G H J K L M DIM. N P
INCHES MIN. MAX. 0.044 0.004 0.040 0.013 0.020 0.030 0.035 0.003 0.006 0.110 0.119 0.047 0.056 0.075 typical 0.040 typical 0.103 0.024 GRADIENT 10max. 1 2. . . 30
MILLIMETERS MIN. MAX. 1.10 0.10 1.00 0.35 0.50 0.75 0.90 0.08 0.15 2.80 3.00 1.20 1.40 1.90 typical 1.70 typical 2.60 0.60
N H
B L
M E K Collector Emitter D C F
NOTE: 1. Applicable on all sides
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
8
Tel (408) 432-1480
Fax (408)) 432-3440

▲Up To Search▲

Price & Availability of MP4T64539

	To Download MP4T64539 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .